Experimental Evidence for Frenkel Defect Formation in Amorphous SiO 2 by Electronic Excitation
Experimental Evidence for Frenkel Defect Formation in Amorphous SiO 2 by Electronic Excitation
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DOI：
10.1103/physrevlett.80.317
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发表时间：
1998-01
影响因子：
8.6
通讯作者：
H. Hosono;H. Kawazoe;N. Matsunami
中科院分区：
文献类型：
--
作者：
H. Hosono;H. Kawazoe;N. Matsunami
研究了10 MeV质子注入非晶SiO2产生的缺陷浓度。Si-Si键、E′中心或过氧自由基（PORs）的深度分布与电子能量损失的深度分布接近。组织间存在O2分子，其浓度大于PORs. Si-Si键和E′中心的总浓度与间隙O2和PORs的总浓度相当。这些结果提供了实验证据，Frenkel缺陷形成的氧在非晶SiO2中发生的密集电子激发。弗伦克尔缺陷形成的效率估计为1.5 × 10− 7 eV− 1。
Concentrations of defects in amorphous SiO 2 created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E′ centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O 2 molecules were identified and their concentration was larger than that of PORs. The total concentration of the Si-Si bonds and E′ centers was comparable to that of the interstitial O 2 and PORs. These results provide experimental evidence that Frenkel defect formation of an oxygen occurs in amorphous SiO 2 by dense electronic excitation. The efficiency of the Frenkel defect formation was estimated as∼ 5× 10− 7 eV− 1.