Reconfigurable FPGA Computing to Mitigate for Total Ionizing Dose Effects
Reconfigurable FPGA Computing to Mitigate for Total Ionizing Dose Effects
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可重新配置的 FPGA 计算可减轻总电离剂量效应
DOI：
10.1109/aero.2007.352753
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
S. Mostert
中科院分区：
文献类型：
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作者：
F. Smith;S. Mostert
我们提出了一种针对总电离剂量（TID）的现场可编程门阵列（FPGA）硬化的新设计技术。由于商业部件具有先进的功能，因此在空间中越来越多地使用这些部件，必须认识到空间辐射环境有因辐射而造成永久性故障的危险。因此，用于航天器电子设备的集成电路必须具有抗辐射能力。MOS器件中电离辐射引起的阈值电压偏移量与辐射期间施加在栅极终端上的偏置电压有很大关系。如果栅极电压相对于器件衬底为0 V，则在电离辐射的影响下阈值电压位移要小得多。我们可以直接控制施加到栅极端的偏置电压，因此可以控制MOS器件中阈值电压漂移的速率。数字电子电路可以通过选择性地应用模块冗余来加强对TID效应的防御。因此，通过应用双模块冗余，激活一个模块，而另一个模块处于非激活状态，允许非激活模块在其“关闭周期”中退火。实验结果表明，该设计方法通过可重构计算大大提高了现场可编程门阵列的TID容差。
We present a novel design technique for hardening field programmable gate arrays (FPGA) against total ionizing dose (TID). There is increasing use of commercial components in space because of its advanced functionality and it is important to recognize that the space radiation environment poses the risk of permanent malfunction due to radiation. Therefore, the integrated circuits used for spacecraft electronics must be resistant to radiation. The amount of threshold voltage shift in MOS devices caused by ionizing radiation is strongly dependant on the bias voltage applied to the gate terminal during radiation. The threshold voltage shift is much less severe under the influence of ionizing radiation if the gate voltage is 0 V with respect to the device substrate. We have direct control of the bias voltage applied to the gate terminal, and therefore can control the rate of threshold voltage shift in the MOS device. Digital electronic circuits can be hardened against TID effects by selectively applying modular redundancy. By applying double modular redundancy, hence, activating one module while the other is inactivated, allows the inactive modules to anneal during its "off cycle. It is shown by means of experimentation that this new design technique provides greatly improved TID tolerance for field programmable gate arrays by means of reconfigurable computing.