Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite
Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite
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DOI：
10.1016/j.msea.2007.02.059
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发表时间：
2007-09
期刊：
影响因子：
6.4
通讯作者：
Yongsheng Liu;Lai-fei Cheng;Litong Zhang;Shoujun Wu;Duo Li;Yongdong Xu
中科院分区：
文献类型：
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作者：
Yongsheng Liu;Lai-fei Cheng;Litong Zhang;Shoujun Wu;Duo Li;Yongdong Xu
在两个CVD SiC涂层之间引入CVD硼涂层。EDS和XRD结果表明，CVD B涂层为硼晶体，不含其它杂质元素。SEM结果表明，CVD B涂层为片状或柱状晶体，截面致密。在CVD B上沉积的CVD SiC涂层中的裂纹宽度小于在CVD SiC涂层上沉积的CVD SiC涂层中的裂纹宽度。经700°C和1000°C氧化后，XRD结果表明涂层表面形成了B2 O3或B2 O3·xSiO 2薄膜。通过SEM观察，裂纹被密封。在1300°C氧化后，杂化涂层表面有大量的片状物质。氧化失重和残余弯曲强度结果表明，在700°C ~ 1000°C氧化600 min时，SiC/B/SiC杂化多层涂层对C/SiC复合材料的抗氧化性能优于三层CVD SiC涂层，但在1000°C以上，由于B2 O3或B2 O3·xSiO 2的大量挥发，涂层的抗氧化性能较差。
A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700°C and 1000°C, XRD results indicated that the coating was covered by product B2O3or B2O3·xSiO2film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300°C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700°C to 1000°C for 600min, but worse oxidation protection above 1000°C due to the large amount of volatilization of B2O3or B2O3·xSiO2.