Modular Structure of Compact Model for Memristive Devices
Modular Structure of Compact Model for Memristive Devices
复制标题
忆阻器件紧凑模型的模块化结构
DOI：
10.1109/tcsi.2014.2309871
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
S. Kang
中科院分区：
文献类型：
--
作者：
Le Zheng;Sangho Shin;S. Kang
提出了忆阻器的模块化紧凑模型，它描述了各种忆阻器件。其模块化结构可以通过在组成块内采用不同的功能来对各种设备行为进行建模。该模型的窗函数源于对理想忆阻器的理论分析，独特地基于电荷与磁通的本构关系。这不仅解决了先前报道的模型的稳定性问题，而且揭示了可以从各种忆阻器件中始终获得等效的电荷-通量本构关系。对三种忆阻器件的仿真表明，该模型能够反映忆阻器件的常见特性，例如有限的忆阻切换范围、线性/非线性忆阻切换速率、SET/RESET阈值电压、非线性I-V特性以及变化的器件参数。
A modular compact model for memristors which describes a wide range of memristive devices is presented. Its modular structure enables the modeling of various device behaviors by adopting different functions inside the comprising blocks. Rooted from the theoretical analysis on ideal memristors, the window function of the model is uniquely based on the constitutive relationship between charge and flux. This not only solves the stability issue from previously reported models, but also reveals that an equivalent charge-flux constitutive relationship can always be obtained from a variety of memristive devices. Simulations on three types of memristive devices demonstrate that the model is able to reflect common memristive device properties such as limited memristance switching range, linear/nonlinear memristance switching rate, threshold voltages for SET/RESET, nonlinear I-V characteristics, and device parameters with variations.