Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction
Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction
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DOI：
10.1002/adma.201504090
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发表时间：
2016-04-27
影响因子：
29.4
通讯作者：
Im, Seongil
中科院分区：
文献类型：
--
作者：
Pezeshki, Atiye;Hossein, Seyed;Im, Seongil
在玻璃衬底上制备了p型α-MoTe 2和n型MoS 2的钼基货车德瓦耳斯异质结pDn二极管，在5 V的低电压下，器件表现出优异的静态和动态性能，通断电流比大于10（3），理想因子为1.06，在1 kHz的高频下动态整流，高光响应度为322 mA W-1，在蓝光照射下的外量子效率为85%。
Mo-based van der Waals heterojunction pDn diodes with p-type alpha-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 10(3), ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W-1, and an external quantum efficiency of 85% under blue-light illumination.