Self-powered Gate Driver Design for a Gallium Nitride Based Phase Shifted Full Bridge DC-DC Converter for Space Applications
Self-powered Gate Driver Design for a Gallium Nitride Based Phase Shifted Full Bridge DC-DC Converter for Space Applications
复制标题
适用于空间应用的氮化镓基相移全桥 DC-DC 转换器的自供电栅极驱动器设计
DOI：
10.1109/wipda.2018.8569056
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
R. Burgos
中科院分区：
文献类型：
--
作者：
Victor Turriate;Brandon Witcher;Dushan Borovevich;R. Burgos
用于空间DC-DC转换器的抗辐射氮化镓(GaN)场效应管(FET)最近已投放市场。然而，具有小传播延迟、快速上升和下降时间以及隔离GaN栅极驱动器所需的高共模瞬时抗扰度的空间限定数字隔离器目前还不可用。本文设计并测试了一种用于空间移相全桥DC-DC转换器的自供电隔离GaN栅极驱动电路。信号隔离和能量传输到偏置GaN栅极驱动器芯片使用脉冲变压器来实现。在使用200 V抗辐射GaN FET并从100 V直流母线提供400 W的转换器中成功验证了工作状态。实验结果表明，在所提出的实现中，开关节点的电压变化率对顶层开关的死区时间精度有影响，并描述了如何获得更好的死区时间精度。
Radiation hardened Gallium Nitride (GaN) Field Effect Transistors (FETs) for space DC-DC converter applications have been released to the market recently. However; space qualified digital isolators with small propagation delays, fast rise and fall times, and high common mode transient immunity necessary for isolated GaN gate drivers are not currently available. In this work, a self-powered isolated GaN gate drive circuit for a Phase Shifted Full Bridge DC-DC converter for space applications is designed and tested. Signal isolation and energy transfer to bias GaN gate driver chips are achieved using pulse transformers. Operation is successfully verified in a converter using 200 V radiation hardened GaN FETs and delivering 400 W from a 100 V DC bus. Experimental results show the effects that the voltage rate of change of the switch nodes have on dead time accuracy for the top switches in the proposed implementation, and a description of how better dead time accuracy was obtained is included.