Electric field modulation spectroscopy by scanning tunneling microscopy with a nanometer-scale resolution
Electric field modulation spectroscopy by scanning tunneling microscopy with a nanometer-scale resolution
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具有纳米级分辨率的扫描隧道显微镜电场调制光谱
DOI：
10.1063/1.1369385
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发表时间：
2001
影响因子：
4
通讯作者：
K. Maeda
中科院分区：
文献类型：
--
作者：
A. Hida;Y. Mera;K. Maeda
通过将电场调制光谱（EFMS）与扫描隧道显微镜（STM）相结合，设计了仪器，使得能够以纳米级空间分辨率调查半导体中的电子能带结构。使用低温生长的GaAs（LT-GaAs）外延膜的模型实验表明，GaAs衬底和LT-GaAs外延层之间的电子能隙的差异小至0.01 eV，可以区分在EFMS光谱，展示了高能量，以及空间，分辨率的STM-EFMS。
Instrumentation has been devised by coupling electric field modulation spectroscopy (EFMS) with scanning tunneling microscopy (STM) that enables the investigation of electronic band structures in semiconductors with a nanometer-scale spatial resolution. Model experiments using low-temperature-grown GaAs (LT–GaAs) epifilms show that a difference as small as 0.01 eV in electronic energy gaps between the GaAs substrate and the LT–GaAs epilayers can be distinguished in the EFMS spectra, demonstrating the high energy, as well as spatial, resolution of the STM–EFMS.