Dielectric Breakdown in the 1-D Hubbard Model
Dielectric Breakdown in the 1-D Hubbard Model
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DOI：
10.1088/1742-6596/273/1/012145
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
S. Kirino;K. Ueda
中科院分区：
文献类型：
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作者：
S. Kirino;K. Ueda
采用随时间密度矩阵重整化群方法研究了半填充时一维Hubbard模型中的非平衡输运。结果清楚地表明，当外加电压大于电荷间隙时，莫特绝缘相的介电击穿会发生到非平衡稳态。从数值计算得到的电流-电压特性中，我们发现与带绝缘子相比，电流受到相关效应的抑制，并且电流仅受与带宽度相比的小电压的电荷间隙的影响。
Nonequilibrium transport in the one dimensional Hubbard model at half-filling is studied by the time-dependent density matrix renormalization group method. It is clearly demonstrated that dielectric breakdown of the Mott insulating phase to a nonequilibrium steady state occurs when an external voltage is larger than the charge gap. From the numerically obtained current-voltage characteristics we find that the current is suppressed by the correlation effect when compared with that of a band insulator and that the current is scaled only by the charge gap for small voltages compared to the band width.