A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics
A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics
复制标题
DOI：
10.1109/ted.2013.2246791
复制
发表时间：
2013-04-01
影响因子：
3.1
通讯作者：
Chen, An
中科院分区：
文献类型：
--
作者：
Chen, An
本文提出了一个全面的横梁阵列模型，该模型结合了线电阻和非线性设备特性。该模型可以使用矩阵代数求解，适合统计分析。非线性设备解决方案可以评估使用二极管或非线性选择设备的横梁阵列。基于此模型的计算表明，即使对于小的横杆阵列，由于线电阻引起的电压和电流降解也不可以忽略不计，这会限制可行的阵列大小。二极管和非线性选择设备可显着提高阅读操作的感测缘和写作操作的电压窗口。该模型提供了一种定量工具，用于准确分析横杆阵列和评估内存选择设备。
This paper presents a comprehensive crossbar array model that incorporates line resistance and nonlinear device characteristics. The model can be solved using matrix algebra and is suitable for statistical analysis. The nonlinear device solution enables the assessment of crossbar arrays with diode or nonlinear select devices. The calculation based on this model shows that voltage and current degradation due to line resistance are not negligible even for small crossbar arrays, which constrains feasible array size. Diode and nonlinear select devices significantly improve the sensing margin of reading operation and the voltage window of writing operation. This model provides a quantitative tool for accurate analysis of crossbar arrays and the evaluation of memory select devices.