Homoepitaxial diamond chemical vapor deposition for ultra-light doping
Homoepitaxial diamond chemical vapor deposition for ultra-light doping
复制标题
用于超轻掺杂的同质外延金刚石化学气相沉积
DOI：
10.1016/j.mssp.2016.11.012
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Y. Koide
中科院分区：
文献类型：
--
作者：
T. Teraji;J. Isoya;K. Watanabe;S. Koizumi;Y. Koide
采用化学气相沉积法在超高真空（UHV）条件下生长了同质外延金刚石薄膜.优化的生长条件与氧气添加到源气体能够长时间同质外延金刚石生长，而不形成非外延微晶。在这些条件下，无意中掺入的氮被抑制远低于1011 cm-3。通过在生长过程中添加硅或硼，使其与碳的比例低于1 ppb，在同质外延金刚石中形成单一的SiV色心，并在浓度为10 ~（15）cm ~（-3）的条件下沉积轻掺杂p层。
Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial diamond growth without formation of non-epitaxial crystallites. Under these conditions, unintentionally incorporated nitrogen was suppressed well below 1011cm-3. By adding silicon or boron during growth with their ratio to carbon of below 1 ppb, formation of single SiV color center in homoepitaxial diamond and deposition of lightly dopedp-layer was achieved with the concentration of 1015cm-3.