Monoclinic semimetal IrSi synthesized under high pressure above 25 GPa: Crystal structure, electronic, and magnetic properties
Monoclinic semimetal IrSi synthesized under high pressure above 25 GPa: Crystal structure, electronic, and magnetic properties
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DOI：
10.1103/physrevmaterials.4.055002
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发表时间：
2020-05
影响因子：
3.4
通讯作者：
Y. Fujishiro;N. Kanazawa;T. Shinmei;Masayuki Nishi;Takashi Nakajima;T. Arima;Daisuke Hashizume;M. Bahramy;T. Irifune;Y. Tokura
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文献类型：
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作者：
Y. Fujishiro;N. Kanazawa;T. Shinmei;Masayuki Nishi;Takashi Nakajima;T. Arima;Daisuke Hashizume;M. Bahramy;T. Irifune;Y. Tokura
过渡金属单硅化物根据其晶体结构表现出不同的物理性质。关于IrSi，迄今为止仅已知MnP型斜方晶系形式。在本文中，作者报道了通过 25 GPa 以上的高压高温处理成功合成了单斜晶相，而理论预测的 B20 型立方结构在高达 48 GPa 的压力下尚未被识别。磁输运测量揭示了单斜晶型的半金属性质，载流子密度较低，约为 1019 /cm${}^{3}$。结合表面电子能带的大 Rashba 自旋分裂，单斜 IrSi 可以为二维极限中的多功能自旋电子应用提供潜在的材料平台。
Transition metal monosilicides exhibit diverse physical properties depending on their crystal structures. Regarding IrSi, only the MnP-type orthorhombic form has been known so far. In this paper, the authors report a successful synthesis of a monoclinic phase through high-pressure high-temperature treatment above 25 GPa, while the theoretically predicted B20-type cubic structure has not been identified up to 48 GPa. Magneto-transport measurements reveal a semimetallic nature of the monoclinic form with a low carrier density of ~1019 /cm${}^{3}$. Combined with large Rashba spin splitting of surface electronic bands, monoclinic IrSi may offer a potential material platform for versatile spintronic applications in the two-dimensional limit.