Development of single-ion implantation — controllability of implanted ion number
Development of single-ion implantation — controllability of implanted ion number
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单离子注入的发展——注入离子数量的可控性
DOI：
10.1016/s0169-4332(97)80163-8
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发表时间：
1997
影响因子：
6.7
通讯作者：
I. Ohdomari
中科院分区：
文献类型：
--
作者：
T. Matsukawa;T. Fukai;S. Suzuki;K. Hara;M. Koh;I. Ohdomari
综述了单离子注入技术的发展现状，该技术可以将一个又一个的掺杂离子注入到精细半导体区域。将聚焦离子束（FIB）中提取的单离子注入核径迹探测器CR-39中，并通过计算每个单离子入射在CR-39上形成的蚀刻坑数来计算离子束切割后注入离子的平均数量。通过对二次电子数和注入离子数的比较，评价了单离子入射靶的探测效率，并讨论了SII对注入离子数的可控性。
The current status of developing single-ion implantation (SII) which enables us to implant dopant ions one by one into fine semiconductor regions is summarized. Single-ions extracted from a focused ion beam (FIB) have been implanted into a nuclear track detector CR-39 and the average number of implanted ions by chopping the ion beam has been evaluated by counting the etch pits on the CR-39 formed by each single-ion incidence. The detection efficiency of the single-ion incidence into a target has also been evaluated by comparing the count of secondary electrons and the implanted ion number, and the controllability of implanted ion number by SII is discussed.