Organic field-effect transistors
Organic field-effect transistors
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DOI：
10.1002/(sici)1521-4095(199803)10:5
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发表时间：
1998-03-23
影响因子：
29.4
通讯作者：
Horowitz, G
中科院分区：
文献类型：
--
作者：
Horowitz, G
有机场效应晶体管（OFFET）于1987年首次被描述。在过去的两三年里，它们的特性有了惊人的改进。与此同时，还开发了几种模式，以使其运作模式合理化。在这篇综述中，我们研究了最近公布的数据所揭示的OFFERS的性能，主要是场效应流动性和开关电流比。我们比较了已被用作活性成分的各种化合物，并描述了最突出的制造技术。最后，我们分析了有机固体中的电荷输运机制，以及由此产生的OFFEs模型。
Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and on-off current ratio. We compare the various compounds that have been used as the active component, and describe the most prominent fabrication techniques. Finally we analyze the charge transport mechanisms in organic solids, and the resulting models of OFETs.