Synthesis of AlN Nanowires by Al-Sn Flux Method
Synthesis of AlN Nanowires by Al-Sn Flux Method
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DOI：
10.3390/cryst12040516
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发表时间：
2022-04
期刊：
影响因子：
2.7
通讯作者：
Haoxin Mu;Jianli Chen;Lujie Li;Yonggui Yu;Wencheng Ma;Xiaofang Qi;Zhanggui Hu;Yongkuan Xu
中科院分区：
文献类型：
--
作者：
Haoxin Mu;Jianli Chen;Lujie Li;Yonggui Yu;Wencheng Ma;Xiaofang Qi;Zhanggui Hu;Yongkuan Xu
本文介绍了氮化铝纳米线的合成研究进展。采用Al-Sn助熔剂法在蓝宝石衬底上成功制备了AlN纳米线。所得到的纳米线直径为数百纳米，长度为数十微米。透射电子显微镜（TEM）的结果表明，AlN纳米线的生长方向垂直于C轴。AlN纳米线的光致发光（PL）光谱显示出一个宽峰，这归因于AlN带隙中的缺陷能级。本工作提供了一种生长AlN纳米线的新方法，为光电子器件的应用提供了一种潜在的材料。
This paper presents a recent study on the synthesis of AlN nanowires. AlN nanowires were successfully prepared on sapphire substrate by the Al-Sn flux method. The obtained nanowires were hundreds of nanometers in diameter and tens of microns in length. The results of transmission electron microscopy (TEM) show that the growth direction of AlN nanowires was perpendicular to the C axis. The photoluminescence (PL) spectrum of AlN nanowires shows a broad peak, which is ascribed to the defect levels in the AlN bandgap. This work provides a novel method for growing AlN nanowires, which offers a potential material for the application of photoelectron devices.