Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon
Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon
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DOI：
10.1109/ted.2011.2164615
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发表时间：
2011-11-01
影响因子：
3.1
通讯作者：
Wong, H. -S. Philip
中科院分区：
文献类型：
--
作者：
Chai, Yang;Wu, Yi;Wong, H. -S. Philip
对于开发超密度和低功率非易失性存储器技术存在强烈的需求。在本文中，我们提出了一种碳基电阻随机存取存储器与碳纳米管（CNT）电极。无定形碳层夹在快速扩散顶部金属电极和底部CNT电极之间，表现出双极开关行为。CNT电极的使用可以显著减小有源器件区域的尺寸。我们还展示了一个碳基互补电阻开关（CRS）由两个背靠背连接的存储单元，提供了一条路线，以减少在交叉点存储器的寄生电流。CRS单元的比特信息以高阻态存储，因此降低了CRS存储单元的功耗。本文提供了有价值的早期数据的影响，电极尺寸缩小到纳米尺寸。
There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size.