Room-Temperature Measurement of Electrostatically Coupled, Dopant-Atom Double Quantum Dots in Point-Contact Transistors
Room-Temperature Measurement of Electrostatically Coupled, Dopant-Atom Double Quantum Dots in Point-Contact Transistors
复制标题
点接触晶体管中静电耦合掺杂原子双量子点的室温测量
DOI：
10.1103/physrevapplied.12.064050
复制
发表时间：
2019
影响因子：
4.6
通讯作者：
Abualnaja F
中科院分区：
文献类型：
--
作者：
Abualnaja F
将纳米电子器件缩小到10 nm以下的尺寸提高了原子尺度电子学的前景，同时也促进了纳米器件物理学的研究。单原子晶体管，其中电流开关元件由一个原子形成，信息包大小减少到一个电子，可以创建扩展到其最终物理极限的电子开关。由于浅量子威尔斯阱的存在，单原子晶体管的工作一直受限于低温，这抑制了室温纳米电子的应用。此外，室温下多个单原子元素之间的相互作用尚未得到证实。在这里，我们证明了单原子晶体管中掺杂体之间的量子相互作用导致了室温下的双量子点行为。在室温下观察到了电荷稳定和原子间栅控隧穿耦合的异质区。图像处理用于帮助减少数据分析中的观察者偏差。单电子器件模拟被用来研究电荷稳定区随电容和电阻变化的演化。与提取的隧道电容和电阻相结合，这使得实验趋势被再现，并提供掺杂剂原子排列的信息。
The reduction of nanoelectronic devices to sub-10 nm sizes raises the prospect of electronics at the atomic scale, while also facilitating studies on nanoscale device physics. Single-atom transistors, where the current-switching element is formed by one atom and the information packet size is reduced to one electron, can create electronic switches scaled to their ultimate physical limits. Hitherto, single-atom transistor operation has been limited to low temperatures due to shallow quantum wells, which inhibit room-temperature nanoelectronic applications. Furthermore, the interaction between multiple single-atom elements at room temperature has yet to be demonstrated. Here, we show that quantum interactions betweendopants insingle-atom transistors lead to room-temperature double quantum dot behavior. Hexagonal regions of charge stability and gate-controlled tunnel coupling betweenatoms are observed at room temperature. Image processing is used to help reduce observer bias in data analysis. Single-electron device simulation is used to investigate evolution of the charge-stability region with varying capacitance and resistance. In combination with extracted tunnel capacitances and resistances, this allows experimental trends to be reproduced and provides information on the dopant-atom arrangement.