Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes
Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes
复制标题
考虑可调谐能带结构和散射过程的宽带隙半导体高场载流子传输仿真分析
DOI：
10.1063/5.0090308
复制
发表时间：
2022
影响因子：
3.2
通讯作者：
and N. Mori
中科院分区：
文献类型：
--
作者：
H. Tanaka;T. Kimoto;and N. Mori
