Integration of SrTiO3 on crystallographically oriented epitaxial germanium for low-power device applications.
Integration of SrTiO3 on crystallographically oriented epitaxial germanium for low-power device applications.
复制标题
将 SrTiO3 集成在晶体取向外延锗上，用于低功率器件应用。
DOI：
10.1021/am5091726
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发表时间：
2015
影响因子：
9.5
通讯作者：
S. Priya
中科院分区：
文献类型：
--
作者：
M. Hudait;M. Clavel;Yan Zhu;Patrick S. Goley;Souvik Kundu;D. Maurya;S. Priya
SrTiO 3集成在晶体取向的（100）、（110）和（111）外延锗（Ge）上显示出用于新型纳米级晶体管的潜力。锗是有吸引力的，因为它的上级传输性能，而SrTiO 3（STO）是有前途的，因为它的高相对介电常数，都是下一代低电压和低泄漏的金属氧化物半导体场效应晶体管的关键参数。STO和每个晶体取向的Ge层之间的尖锐的异质界面，通过横截面透射电子显微镜研究，以及在每个异质结的带偏移参数提供了一个显着的进步，设计新一代的铁电锗基多功能器件。此外，在金属-绝缘体-半导体（MIS）结构中，STO作为金属和n型（4 × 10（18）cm（-3））外延Ge之间的中间层，电流密度增加了1000倍，同时比接触电阻降低。此外，在n-Ge上包含STO证明了STO在n-Ge上的MIS行为的第一个实验结果。
SrTiO3 integration on crystallographic oriented (100), (110), and (111) epitaxial germanium (Ge) exhibits a potential for a new class of nanoscale transistors. Germanium is attractive due to its superior transport properties while SrTiO3 (STO) is promising due to its high relative permittivity, both being critical parameters for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. The sharp heterointerface between STO and each crystallographically oriented Ge layer, studied by cross-sectional transmission electron microscopy, as well as band offset parameters at each heterojunction offers a significant advancement for designing a new generation of ferroelectric-germanium based multifunctional devices. Moreover, STO, when used as an interlayer between metal and n-type (4 × 10(18) cm(-3)) epitaxial Ge in metal-insulator-semiconductor (MIS) structures, showed a 1000 times increase in current density as well as a decrease in specific contact resistance. Furthermore, the inclusion of STO on n-Ge demonstrated the first experimental findings of the MIS behavior of STO on n-Ge.
影响因子：
64.8
作者：
Ohtomo, A;Hwang, HY
通讯作者：
Hwang, HY