FEMTOSECOND LASER EXCITATION OF THE SEMICONDUCTOR-METAL PHASE-TRANSITION IN VO2
FEMTOSECOND LASER EXCITATION OF THE SEMICONDUCTOR-METAL PHASE-TRANSITION IN VO2
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DOI：
10.1063/1.112974
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发表时间：
1994-09-19
影响因子：
4
通讯作者：
BRUN, A
中科院分区：
文献类型：
--
作者：
BECKER, MF;BUCKMAN, AB;BRUN, A
我们测量了飞秒激光脉冲激发的固态超导体-金属相变的亚皮秒光学响应。 我们已经确定了VO 2薄膜的复折射率的动态响应，通过在780 nm的泵浦-探测光透射和反射测量。 相变被发现是很大程度上迅速与高温金属态的光学性质被达到5 ps内。 复折射率的超快变化使VO 2中的超快光开关器件成为可能。
We have measured the subpicosecond optical response of a solid-state, semiconductor-to-metal phase transition excited by femtosecond laser pulses. We have determined the dynamic response of the complex refractive index of VO2 thin films by making pump-probe optical transmission and reflection measurements at 780 nm. The phase transition was found to be largely prompt with the optical properties of the high-temperature metallic state being attained within 5 ps. The ultrafast change in complex refractive index enables ultrafast optical switching devices in VO2.