Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films
Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films
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DOI：
10.1063/1.3098408
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发表时间：
2009-03
影响因子：
4
通讯作者：
T. Kawae;Yuki Terauchi;H. Tsuda;M. Kumeda;A. Morimoto
中科院分区：
文献类型：
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作者：
T. Kawae;Yuki Terauchi;H. Tsuda;M. Kumeda;A. Morimoto
采用脉冲激光沉积法在Pt/SrTiO 3（100）衬底上制备了多晶BiFeO 3（BFO）、Ti掺杂BFO、Mn掺杂BFO和（Mn，Ti）共掺杂BFO（BFMT）薄膜。在这些离子掺杂的BFO薄膜中观察到的漏电流行为表明，在高电场区域的空间电荷限制电流的主导地位。由于形成了深陷阱，BFMT膜的漏电流相对于其它膜大大降低。在BFMT膜中，观察到良好饱和的P-E滞后曲线。最大电场为2100 kV/cm时，剩余极化强度和矫顽场分别为75 μC/cm 2和310 kV/cm。
Polycrystalline BiFeO3 (BFO), Ti-doped BFO, Mn-doped BFO, and (Mn, Ti)-codoped BFO (BFMT) thin films were fabricated on Pt/SrTiO3 (100) substrate by pulsed laser deposition. Observed leakage current behavior in those ion-doped BFO films indicated the dominance of space-charge-limited current in the high electric field region. The leakage current of the BFMT film was much reduced in relation to the other films due to the formation of deep traps. In the BFMT film, well saturated P-E hysteresis curves were observed. Remanent polarization and coercive field for maximum electric field of 2100 kV/cm were 75 μC/cm2 and 310 kV/cm, respectively.