Using Graph Attention Network to Reversely Design GaN MIS-HEMTs Based on Hand-Drawn Characteristics
Using Graph Attention Network to Reversely Design GaN MIS-HEMTs Based on Hand-Drawn Characteristics
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DOI：
10.1109/access.2023.3293001
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发表时间：
--
期刊：
影响因子：
3.6
通讯作者：
Yi-Ming Tseng
中科院分区：
文献类型：
--
作者：
Yi-Ming Tseng; Bang-Ren Chen; Wei-Cheng Lin; Wen-Jay Lee; Nan-Yow Chen; Tian-Li Wu
In this work, the methodology using Graph Attention Network (GAT) for the reserve design in GaN power MIS-HEMTs based on hand-drawn characteristics is demonstrated for the first-time. The hand-drawn ID-VG characteristic is constructed by Ramer-Douglas-Peucker algorithm. Then, the extracted information is sent to the Graph Attention Network to receive the corresponding device design variables, including tAlGaN, recessed depth, Al%, Lg, Lgd, and Lgs. Less than 30 seconds is consumed to generate the design variables and less than 8% of the differences in the key extracted parameters, such as threshold voltage (Vth), On-state current (Ion), and subthreshold slope (SS), can be achieved by comparing hand-drawn ID-VG and simulated ID-VG characteristic based on the design variables from GAT model. Therefore, the developed GAT approach is promising for the reverse design of GaN power MIS-HEMTs, which can provide users with efficient and valuable design suggestions to optimize the devices toward the targeting performance.
