Amorphous (Mo, Ta, or W)-Si-N diffusion barriers for Al metallizations
Amorphous (Mo, Ta, or W)-Si-N diffusion barriers for Al metallizations
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DOI：
10.1063/1.360909
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发表时间：
1996-01-15
影响因子：
3.2
通讯作者：
Ruiz, RP
中科院分区：
文献类型：
--
作者：
Reid, JS;Kolawa, E;Ruiz, RP
从 M(5)Si(3) 和 WSi2 靶材反应溅射的 M-Si-N 和 M-Si（M=Mo、Ta 或 W）薄膜作为硅铝金属化的扩散阻挡层进行了研究。分析方法包括浅结二极管的电学测试、He-4(++)背散射光谱法、X射线衍射、透射电子显微镜、扫描电子显微镜和二次离子质谱法。在适当的成分下，M-Si-N 薄膜可防止铝覆盖层在铝熔点以上退火 10 分钟后导致浅结二极管电性能退化。二次离子质谱分析表明，在 700 摄氏度/10 小时的处理过程中，Al 几乎没有扩散到 M-Si-N 薄膜中。通过透射电子显微镜可以看到，这种稳定性部分归因于在 M-Si-N/AI 界面上生长的 3 纳米厚的自密封 AlN 层。 (C) 1996 年美国物理研究所。
M-Si-N and M-Si (M=Mo, Ta, or W) thin films, reactively sputtered from M(5)Si(3) and WSi2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, He-4(++) backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M-Si-N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M-Si-N films during a 700 degrees C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick A1N layer that grows at the M-Si-N/AI interface, as seen by transmission electron microscopy. (C) 1996 American Institute of Physics.