Thickness Dependence of Extrinsic Dielectric Response in Reduced Ni-Doped KTaO3
Thickness Dependence of Extrinsic Dielectric Response in Reduced Ni-Doped KTaO3
复制标题
还原镍掺杂 KTaO3 中外在介电响应的厚度依赖性
DOI：
10.1143/jjap.51.09lc01
复制
发表时间：
2012
影响因子：
1.5
通讯作者：
S. Tsukada and Y. Akishige
中科院分区：
文献类型：
--
作者：
Y Rahnavard;G Rashedi;T Yokoyama;今村真幸，遠藤修平，高橋和敏，山本勇，東純平，鎌田雅夫;K. Sato;S. Tsukada and Y. Akishige
还原1.0摩尔%-Ni掺杂KTaO 3单晶的介电响应进行了研究，以确定高介电常数为160000，与小于0.1的低介电损耗的机制。介电常数取决于样品厚度、样品颜色和电极材料。所得到的结果强烈支持肖特基势垒在晶体和电极之间的界面处的存在，我们推断，大量的自由电子是必不可少的诱导非本征介电效应。
The dielectric response of reduced 1.0 mol%-Ni-doped KTaO 3 single crystals was studied to determine the mechanism of the high dielectric constant of 160000, with a low dielectric loss of less than 0.1. The dielectric constant depends on the sample thickness, sample color, and electrode material. The obtained results strongly support the existence of a Schottky barrier at the interface between the crystal and electrodes, and we deduce that a large number of free electrons are essential for inducing the extrinsic dielectric effect.