Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density
Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density
复制标题
控制 4H-SiC (0001) 热氧化过程以降低界面态密度
DOI：
10.1149/06408.0023ecst
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and Yuki Fujino
中科院分区：
文献类型：
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作者：
Koji Kita;Richard Heihachiro Kikuchi;Hirohisa Hirai;and Yuki Fujino
根据SiC氧化的热力学和动力学原理，选择合适的热氧化条件，制备了具有接近理想电容-电压特性的SiO2/4 H-SiC（0001）MOS电容器。通过在1300 ° C的斜坡加热炉中进行短上升/下降时间的热氧化，然后在800 ° C下进行低温O2退火，获得了在SiC导带以下0.1- 0.4eV能量范围内界面缺陷态密度<1011 cm-2 eV-1的低界面。
We fabricated SiO2/4H-SiC (0001) MOS capacitors with nearlyideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density< 10 11 cm-2 eV-1 for the energy range 0.1–0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 o C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O2 anneal at 800 o C.