Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region
Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region
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GaAs:Er,O 近带边区域的光致发光激发光谱
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
A. Taguchi
中科院分区：
文献类型：
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作者：
R. Hogg;K. Takahei;A. Taguchi
我们报告了GaAs：Er，O样品的光谱研究，通过金属有机化学气相沉积生长，激发在近带边区域，1.22-1.62 eV。在这些样品中，主体激发下的光致发光主要是由于Er-2 O中心（与两个相邻氧原子耦合的镓位点处的铒原子）引起的发光。通过光致发光激发（PLE）光谱观察4 I15/2→ 4 I11/2的4f-壳层内跃迁，证明了不同Er中心的表征。这些晶场分裂4f-壳层能级之间的跃迁在λ 1.26 eV（λ 980 nm）处观察到，这是在使用Ti：Sapphire激光器的PLE光谱可获得的能量处。两条线被指定为Er-2 O中心。这允许对不同中心的相对浓度进行半定量测量。PLE光谱也被用来研究与Er-2 O中心相关的陷阱能级。然而，我们没有发现这样的陷阱水平在这个能量范围内的证据。那个...
We report a spectroscopic study of GaAs:Er,O samples grown by metalorganic chemical vapor deposition, with excitation in the near‐band‐edge region, 1.22–1.62 eV. Photoluminescence under host‐excitation is dominated by luminescence due to the Er‐2O center (an erbium atom at a gallium site coupled with two adjacent oxygen atoms) in these samples. The characterization of different Er centers is demonstrated by the observation of 4I15/2→4I11/2 intra‐4f‐shell transitions by photoluminescence excitation (PLE) spectroscopy. The transitions between these crystal‐field‐split 4f‐shell levels are observed at ∼1.26 eV (∼980 nm) which is at an energy attainable by PLE spectroscopy with a Ti:Sapphire laser. Two lines are assigned to the Er‐2O center. This allows a semi‐quantitative measurement of the relative concentrations of different centers to be made. PLE spectroscopy was also employed to study the trap levels related to the Er‐2O center. However, we find no evidence for such a trap level in this energy range. The...