A Monolithic Pixel Sensor with Fine Space-Time Resolution Based on Silicon-on-Insulator Technology for the ILC Vertex Detector
A Monolithic Pixel Sensor with Fine Space-Time Resolution Based on Silicon-on-Insulator Technology for the ILC Vertex Detector
复制标题
用于 ILC 顶点探测器的基于绝缘体上硅技术的具有精细时空分辨率的单片像素传感器
DOI：
10.1007/978-981-13-1316-5_69
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
Akimasa Ishikawa
中科院分区：
文献类型：
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作者：
Shun Ono;Miho Yamada;Yasuo Arai;Toru Tsuboyama;Manabu Togawa;Teppei Mori;Ikuo Kurachi;Kazuhiko Hara;Yoichi Ikegami;Daisuke Sekigawa;Shun Endo;Akimasa Ishikawa
我们正在开发一种新的单片像素传感器与硅绝缘体（SOI）技术的ILC顶点探测器系统。新的SOI传感器SOFIST可以存储带电粒子的位置和定时信息。第一个原型传感器的像素间距为20 µm，在120 GeV质子束下进行了评估。位置分辨率约为1.7 µm。我们目前正在设计下一代原型传感器芯片，其像素电路针对3D堆叠技术进行了优化。
We are developing a new monolithic pixel sensor with Silicon-on-Insulator (SOI) technology for the ILC vertex detector system. The new SOI sensor SOFIST can store both the position and timing information of charged particles. The first prototype sensor with the pixel pitch of 20 µm was evaluated at 120 GeV proton beam. The position resolution was about 1.7 µm. We are currently designing next prototype sensor chips with the pixel circuit optimized for 3D stacking technology.