Spectral simulation of GaAs and InAs quantum-dot terahertz detectors designed for higher-temperature operation
Spectral simulation of GaAs and InAs quantum-dot terahertz detectors designed for higher-temperature operation
复制标题
专为高温操作而设计的 GaAs 和 InAs 量子点太赫兹探测器的光谱模拟
DOI：
10.1063/1.2349556
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发表时间：
2006
影响因子：
3.2
通讯作者：
B. Jonker
中科院分区：
文献类型：
--
作者：
I. Vurgaftman;J. Meyer;Dong Wu;K. Bussmann;B. Jonker
针对GaAs和InAs电子通道的情况，分析了采用单电子晶体管的单光子量子点太赫兹探测器的光谱特性和其他性能特征。通过在浅二维电子气结构中定义静电限制的双量子点结构，这些器件具有在稀释制冷机范围以上的温度下操作的潜力。我们利用随机相位近似，结合实际的能带结构和三维限制几何，计算了能级间等离子体吸收。虽然水平分离随着点直径的减小而增加，但载流子耗尽最终限制了可行的最小尺寸。GaAs沟道的最大探测频率约为1 THz，而InAs沟道的最大探测频率则增加到1.5- 2 THz。
The spectral properties and other performance characteristics of single-photon quantum-dot terahertz detectors incorporating single-electron transistors are analyzed for the cases of GaAs and InAs electron channels. By defining the electrostatically confined double-quantum-dot structures in shallow two-dimensional electron gas structures, these devices have the potential to operate at temperatures above the dilution refrigerator range. We calculate the interlevel plasmon absorption by using the random-phase approximation in conjunction with realistic band structures and three-dimensional confinement geometries. While the level separations increase with decreasing dot diameter, carrier depletion eventually limits the minimum size that is viable. The maximum detection frequency is about 1THz for GaAs channels, but increases to 1.5–2THz for InAs channels having a lower effective mass.
影响因子：
4
作者：
Astafiev, O;Komiyama, S;Hirakawa, K
通讯作者：
Hirakawa, K