Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects
Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects
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DOI：
10.1109/ted.2009.2037365
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发表时间：
2010-01
影响因子：
3.1
通讯作者：
H. Tsuchiya;H. Ando;S. Sawamoto;T. Maegawa;T. Hara;H. Yao;M. Ogawa
中科院分区：
文献类型：
--
作者：
H. Tsuchiya;H. Ando;S. Sawamoto;T. Maegawa;T. Hara;H. Yao;M. Ogawa
在本文中，我们研究了硅纳米线（SNW）和半导体石墨烯纳米带（GNR） mosfet的性能潜力，利用第一性原理的能带结构和基于“势垒顶”模型的弹道电流估计。结果，我们发现snw - mosfet通过原子带结构效应显示出很强的方向依赖性，并且当线尺寸小于3 nm时，snw - mosfet提供比Si超薄体mosfet更小的本特性器件延迟。此外，如果设计能带宽度大于几纳米并且可以建立有限带隙，则发现gnr - mosfet具有很好的器件性能。
In this paper, we investigate the performance potentials of silicon nanowire (SNW) and semiconducting graphene nanoribbon (GNR) MOSFETs by using first-principles bandstructures and ballistic current estimation based on the ¿top-of-the-barrier¿ model. As a result, we found that SNW-MOSFETs display a strong orientation dependence via the atomistic bandstructure effects, and SNW-MOSFETs provide smaller intrinsic device delays than Si ultrathin-body MOSFETs when the wire size is scaled smaller than 3 nm. Furthermore, GNR-MOSFETs are found to exhibit promising device performance if the ribbon width is designed to be larger than a few nanometers and a finite band gap can be established.