Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
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等离子体增强原子层沉积合成Hf-硅酸盐薄膜的特性
DOI：
10.1116/1.2966430
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Jane P. Chang
中科院分区：
文献类型：
--
作者：
J. Liu;R. M. Martin;Jane P. Chang
使用等离子体增强原子层沉积工艺，通过交替氧化铪和氧化硅的沉积循环来生长硅酸铪薄膜。使用掠入射X射线衍射确定所沉积的和900 °C退火的硅酸铪膜是非晶的。这表明硅酸铪的形成抑制了高温下HfO 2的结晶。当硅酸铪薄膜中铪含量从9原子%增加到17原子%时，介电常数从0.05增加到0.017。 在1.6-2.3 nm的范围内，通过富Hf的Hf-硅酸盐膜的漏电流比具有相同等效氧化物厚度的SiO2的漏电流低两到三个数量级。从O 1 s等离子体损耗谱的Hf-硅酸盐薄膜的估计的带隙增加，由于SiO2的带隙比HfO 2的带隙更高的Si含量。
Hafnium silicate films were grown by alternating the deposition cycles of hafnium oxide and silicon oxide using a plasma enhanced atomic layer deposition process. The as-deposited and 900 °C annealed hafnium silicate films were determined to be amorphous using grazing incidence x-ray diffraction. This suggested that the formation of hafnium silicate suppressed the crystallization of HfO2 at high temperatures. The dielectric constants increased from ∼5 to ∼17 as the hafnium content increased from 9 to 17 at. % in the hafnium silicate films. The leakage currents through the Hf-rich Hf-silicate films were two to three orders of magnitude lower than that of SiO2 with the same equivalent oxide thickness in the range of 1.6–2.3 nm. The estimated band gap of Hf-silicate films from the O 1s plasma loss spectra increased with the increasing Si content due to the higher band gap of SiO2 than that of HfO2.