Junction temperature measurements and thermal modeling of GaInN/GaN quantum well light-emitting diodes
Junction temperature measurements and thermal modeling of GaInN/GaN quantum well light-emitting diodes
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DOI：
10.1007/s11664-007-0370-7
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发表时间：
2008-05-01
影响因子：
2.1
通讯作者：
Wetzel, C.
中科院分区：
文献类型：
--
作者：
Senawiratne, J.;Li, Y.;Wetzel, C.
我们通过显微拉曼光谱对蓝宝石和块状 GaN 衬底上生长的 GaInN/GaN 量子阱 (QW) 发光二极管 (LED) 进行结温分析。在高达 250 mA (357 A/cm(2)) 的驱动电流下测量温度。我们发现在热阻为 75 K/W 的 GaN 衬底上生长的芯片具有更好的冷却效率。对于蓝宝石基板上的芯片，我们发现值高达 425 K/W。后者较差的热性能归因于蓝宝石的低导热率。三维有限元模拟与实验结果吻合良好，验证了我们的热模型可用于设计更好的冷却结构。
We present a junction temperature analysis of GaInN/GaN quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro-Raman spectroscopy. The temperature was measured up to a drive current of 250 mA (357 A/cm(2)). We find better cooling efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire substrates we find values as high as 425 K/W. Poor thermal performance in the latter is attributed to the low thermal conductivity of the sapphire. Three-dimensional finite-element simulations show good agreement with the experimental results, validating our thermal model for the design of better cooled structures.