Design methodology for a very high frequency resonant boost converter
Design methodology for a very high frequency resonant boost converter
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DOI：
10.1109/tpel.2012.2202128
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发表时间：
2013-04
期刊：
影响因子：
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通讯作者：
Justin M. Burkhart;R. Korsunsky;D. Perreault
中科院分区：
文献类型：
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作者：
Justin M. Burkhart;R. Korsunsky;D. Perreault
本文介绍了一种适用于超高频工作的谐振升压转换器拓扑结构的设计方法。与使用大量无源元件的其他拓扑相比，我们研究的拓扑具有部件数量少、瞬变响应快的特点，但存在较高的器件应力。针对这种拓扑结构，提出了一种不依赖于参数的时域仿真扫描的数值设计方法。这使得可以为特定的主半导体开关找到最佳的转换器设计。如果在设计者控制半导体开关布局的情况下使用集成电源工艺，则可以找到转换器设计和半导体布局的最佳组合。为了验证所提出的转换器拓扑结构和设计方法，设计了一个75 MHz的原型转换器，并进行了实验验证。该样机的性能与设计过程中预测的结果非常接近，并且在较宽的输入电压范围内获得了良好的效率。
This document introduces a design methodology for a resonant boost converter topology that is suitable for operation at very high frequencies. The topology we examine features a low parts count and fast transient response but suffers from higher device stresses compared to other topologies that use a larger number of passive components. A numerical design procedure is developed for this topology that does not rely on time-domain simulation sweeps across parameters. This allows the optimal converter design to be found for a particular main semiconductor switch. If an integrated power process is used where the designer has control over layout of the semiconductor switch, the optimal combination of converter design and semiconductor layout can be found. To validate the proposed converter topology and design approach, a 75 MHz prototype converter is designed and experimentally demonstrated. The performance of the prototype closely matches that predicted by the design procedure, and achieves good efficiency over a wide input voltage range.