Pressure-Induced Mott Transition in an Organic Superconductor with a Finite Doping Level
Pressure-Induced Mott Transition in an Organic Superconductor with a Finite Doping Level
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DOI：
10.1103/physrevlett.114.067002
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发表时间：
2015-02-09
影响因子：
8.6
通讯作者：
Kanoda, K.
中科院分区：
文献类型：
--
作者：
Oike, H.;Miyagawa, K.;Kanoda, K.
本文报道了掺杂有机超导体的压力研究和霍尔系数及电导率的测量。我们发现，最大限度地增强超导性和边缘费米液体出现在一定的压力附近，移动的载流子的临界增加，这表明可能的强关联和弱关联制度之间的量子相变。这一观察点的存在下的临界性Mottness掺杂莫特绝缘体与可调相关。
We report the pressure study of a doped organic superconductor with a Hall coefficient and conductivity measurements. We find that maximally enhanced superconductivity and a marginal-Fermi liquid appear around a certain pressure where mobile carriers increase critically, suggesting a possible quantum phase transition between strongly and weakly correlated regimes. This observation points to the presence of a criticality in Mottness for a doped Mott insulator with tunable correlation.