Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers
Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers
复制标题
MOS 门控 Ge/sub x/Si/sub 1-x//Si 异质结构反型层中的空穴迁移率增强
DOI：
10.1109/55.144950
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发表时间：
1992
影响因子：
4.9
通讯作者：
J. Sturm
中科院分区：
文献类型：
--
作者：
P. Garone;V. Venkataraman;J. Sturm
通过在PMOS晶体管栅极氧化物下方7.5 ~ 10.0 nm处放置埋入式外延Ge/sub x/Si/sub 1-x/层，证明了与全硅控制器件相比，在室温下空穴迁移率提高50%，在90k时提高100%以上。在GeSi/sub - 1-x/层超过平衡临界厚度的结构中，倒置区错配位错导致迁移率退化
Effective hole mobility enhancements of 50% at room temperature and over 100% at 90 K, compared to all-Si controlled devices, are demonstrated by placing a buried epitaxial Ge/sub x/Si/sub 1-x/ layer 7.5 to 10.0 nm beneath the gate oxide of a PMOS transistor. Mobility degradation caused by misfit dislocations in the inversion region is seen in structures with GeSi/sub 1-x/ layers that exceed the equilibrium critical thickness.<<ETX>>