Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes
Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes
复制标题
五元-四元异质结发光二极管的中红外电致发光
DOI：
10.1063/1.3177193
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发表时间：
2009
影响因子：
4
通讯作者：
A. Krier
中科院分区：
文献类型：
--
作者：
N. Cook;A. Krier
制备了InAs-GaInAsSbP-InAsSbP双异质结电致发光二极管，室温下的电致发光波长为3.7微米。观察到了与合金无序和局域势涨落有关的带尾态的辐射复合，以及来自InAs-五元异质界面局域态的发射。
InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.