High crystalline quality single crystal chemical vapour deposition diamond
High crystalline quality single crystal chemical vapour deposition diamond
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DOI：
10.1088/0953-8984/21/36/364205
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发表时间：
2009-08
期刊：
影响因子：
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通讯作者：
P. Martineau;M. Gaukroger;K. B. Guy;S. Lawson;D. Twitchen;I. Friel;J. O. Hansen;G. C. Summerton;T. Addison;R. Burns
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文献类型：
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作者：
P. Martineau;M. Gaukroger;K. B. Guy;S. Lawson;D. Twitchen;I. Friel;J. O. Hansen;G. C. Summerton;T. Addison;R. Burns
高压，高温（HPHT）合成钻石底物上的同型化学蒸气沉积（CVD）允许生产具有控制点缺陷含量的钻石材料，以最大程度地减少缺陷含量。底物扩展的缺陷达到了初始生长表面，并且在CVD层及其底物之间的界面上的位错成核已表明。当使用IIA型HPHT合成底物时，在界面处的脱位密度可以小于400 cm-2。内容依赖性扇区的部门都包含最高的堆叠断层和位置没有两者都没有。指导适合CVD合成具有高晶体完美和受控点缺陷含量的材料的底物的选择和处理。
Homoepitaxial chemical vapour deposition (CVD) on high pressure, high temperature (HPHT) synthetic diamond substrates allows the production of diamond material with controlled point defect content. In order to minimize the extended defect content, however, it is necessary to minimize the number of substrate extended defects that reach the initial growth surface and the nucleation of dislocations at the interface between the CVD layer and its substrate. X-ray topography has indicated that when type IIa HPHT synthetic substrates are used, the density of dislocations nucleating at the interface can be less than 400 cm−2. X-ray topography, photoluminescence imaging and birefringence microscopy of HPHT grown synthetic type IIa diamond clearly show that the extended defect content is growth sector dependent. ⟨111⟩ sectors contain the highest concentration of both stacking faults and dislocations but ⟨100⟩ sectors are relatively free of both. It has been shown that HPHT treatment of such material can significantly reduce the area of stacking faults and cause dislocations to move. This knowledge, coupled with an understanding of how growth sectors develop during HPHT synthesis, has been used to guide selection and processing of substrates suitable for CVD synthesis of material with high crystalline perfection and controlled point defect content.