Derivation of the transport equation for electrons moving through random impurities

Derivation of the transport equation for electrons moving through random impurities
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电子穿过随机杂质的传输方程的推导

DOI:
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发表时间:
1977
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影响因子:
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通讯作者:
H. Spohn
H. Spohn
中科院分区:
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文献类型:
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作者:
H. Spohn

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一个单一的(非相对论性的,无自旋的)电子受到恒定的外部电场与位于无限延伸的晶格上的杂质相互作用,通过随机强度的电势。随机强度由高斯随机变量场给出。我们证明了平均动力学的存在性,并证明了在弱耦合极限λ → 0,λ2t=τ固定的情况下,得到了通常的速度分布输运方程。
A single (nonrelativistic, spinless) electron subject to a constant external electric field interacts with impurities located on an infinitely extended lattice by a potential of random strength. The random strength is given by a field of Gaussian random variables. We show the existence of the averaged dynamics and prove that in the weak coupling limit, λ → 0, λ2t=τ fixed, one obtains the usual transport equation for the velocity distribution.