Understanding the Mechanism of Stress Mitigation in Selenium-Doped Germanium Electrodes
Understanding the Mechanism of Stress Mitigation in Selenium-Doped Germanium Electrodes
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DOI:
10.1149/2.1091902jes
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发表时间:
2019-10
影响因子:
3.9
通讯作者:
X. Wang;C. Yenusah;K. Tantratian;M. Meyerson;A. Guo;C. Mullins;L. Zhu;L. Chen
中科院分区:
文献类型:
--
作者:
X. Wang;C. Yenusah;K. Tantratian;M. Meyerson;A. Guo;C. Mullins;L. Zhu;L. Chen
This paper aims to investigate the mechanism of stress mitigation in micrometer (μm) sized Selenium (Se)-doped Germanium (Ge) electrode, which includes a self-forming inactive Li-Ge-Se network enveloping multiple nanometer-sized crystalline Ge (c-Ge) particles. Considering the electrode system contains multiply active particles, models based on single-particle are unable to fully understand elusive underpinning mechanism. Hence, a phase-field model is employed to investigate the effect of the Li-Ge-Se network on the particle-particle interaction, and the stress variation of the electrode upon lithiation. The amorphous Li-Ge-Se network provides an effective Li diffusion path for inter-particle diffusion, reducing stress difference between the surfaces of neighboring particles. Furthermore, the constraint between the adjacent particles induces a higher compressive stress at the reaction front impeding the mobile Li insertion during lithiation. Though small c-Ge nano-particle in the Ge 0.9 Se 0.1 microparticle is lithiated quickly, the compressive stress is generated at its center for stress equilibrim causing more retardation effect. Meanwhile, the size difference between adjacent particles increases the principle and shear stresses in the inactive Li-Ge-Se, which could potentially lead to mechanical failure and debonding of the amorphous network. We believe that the results of this investigation can shed some light on the optimization design of electrodes.