Metallic supercurrent field-effect transistor
Metallic supercurrent field-effect transistor
复制标题
DOI：
10.1038/s41565-018-0190-3
复制
发表时间：
2018-09-01
影响因子：
38.3
通讯作者：
Giazotto, Francesco
中科院分区：
文献类型：
--
作者：
De Simoni, Giorgio;Paolucci, Federico;Giazotto, Francesco
伦敦兄弟在他们最初的超导性公式中预言：（1）超导体内部的静电场在所谓的伦敦穿透深度（2-4）λ（L）上的指数抑制。尽管有一些实验表明静电场引起的微扰（5-7），但迄今为止还没有提供通过场效应操纵金属超导体的可能性的线索。在这里，我们报告的场效应控制的超导薄膜制成的全金属晶体管的超导电流。在低温下，我们的场效应晶体管显示出单调衰减的临界电流下增加的静电场的栅极电压值高达+/- 40 V的钛基器件的总淬火。这种双极场效应持续到临界温度的85%（类似于0.41 K），并且存在相当大的磁场。在铝薄膜场效应晶体管中也观察到类似的行为。一个唯象理论解释了我们的观测结果，并指出了在超导膜内部传播的电场引起的扰动的解释。在我们的理解中，这会影响配对势并淬灭超电流。这些结果可以代表实现全金属超导场效应电子学和前沿量子信息架构的开创性资产（8，9）。
In their original formulation of superconductivity, the London brothers predicted(1) the exponential suppression of an electrostatic field inside a superconductor over the so-called London penetration depth(2-4), lambda(L). Despite a few experiments indicating hints of perturbation induced by electrostatic fields(5-7), no clue has been provided so far on the possibility to manipulate metallic superconductors via the field effect. Here, we report field-effect control of the supercurrent in all-metallic transistors made of different Bardeen-Cooper-Schrieffer superconducting thin films. At low temperature, our field-effect transistors show a monotonic decay of the critical current under increasing electrostatic field up to total quenching for gate voltage values as large as +/- 40 V in titanium-based devices. This bipolar field effect persists up to similar to 85% of the critical temperature (similar to 0.41 K), and in the presence of sizable magnetic fields. A similar behaviour is observed in aluminium thin-film field-effect transistors. A phenomenological theory accounts for our observations, and points towards the interpretation in terms of an electric-fieldinduced perturbation propagating inside the superconducting film. In our understanding, this affects the pairing potential and quenches the supercurrent. These results could represent a groundbreaking asset for the realization of all-metallic superconducting field-effect electronics and leading-edge quantum information architectures(8,9).