Molecular-Beam Epitaxial Growth and Structures of Dy on (100) and (211)Cr Thin Films
Molecular-Beam Epitaxial Growth and Structures of Dy on (100) and (211)Cr Thin Films
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(100) 和 (211)Cr 薄膜上 Dy 的分子束外延生长和结构
DOI：
10.1143/jjap.45.7056
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
Masahiko Yamamoto
中科院分区：
文献类型：
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作者：
Y. Kamada;H. Tanino;T. Kingetsu;Masahiko Yamamoto
利用分子束外延技术研究了在体心立方（100）和（211）Cr薄膜上生长的六方密排Dy层的晶体生长和结构。在（100）和（110）MgO衬底上分别生长Cr，制备了表面光滑的（100）和（211）Cr膜。在这些Cr薄膜上生长了Dy层。在生长过程中，利用反射高能电子衍射监测表面结构。生长后，用x射线衍射分析膜的结构。我们发现，在50℃条件下，Dy层在（100）Cr上外延生长，并有两种类型的主导结构域：Dy(0001)[2110]∥Cr(100)[001]和Dy(0001)[0110]∥Cr(100)[001]。我们还发现（1012）Dy在（211）Cr上以大约3.7°的倾角在50°C下外延生长。取向关系为倾斜的dy(1012)[1210]∥Cr(211)[111]。结合晶体结构和几何关系对这些取向关系进行了讨论。我们表明，观察到的取向关系可以借助几何考虑成功地用应变来解释。
We studied the crystal growth and structures of hexagonal close-packed Dy layers grown on body-centered cubic (100) and (211)Cr thin films using molecular-beam epitaxy. The (100) and (211)Cr films with smooth surfaces were prepared by growing Cr on (100) and (110)MgO substrates, respectively. The Dy layers were grown on these Cr thin films. During growth, surface structures were monitored by reflection high-energy electron diffraction. After growth, X-ray diffractometry was performed to analyze film structures. We found that Dy layers grow epitaxially on (100)Cr at 50 °C with two types of predominant domain: Dy(0001)[2110] ∥ Cr(100)[001] and Dy(0001)[0110] ∥ Cr(100)[001]. We also found that (1012)Dy grows epitaxially at 50 °C on (211)Cr with a tilt of approximately 3.7°. The orientational relationship is tilted-Dy(1012)[1210] ∥ Cr(211)[111]. These orientational relationships were discussed in connection with crystal structures and geometrical relationships. We show that the observed orientational relationships can be successfully explained in terms of strain with the aid of geometrical consideration.