Recent progress in electron-beam resists for advaced mask-making
Recent progress in electron-beam resists for advaced mask-making
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用于先进掩模制造的电子束抗蚀剂的最新进展
DOI：
10.1147/rd.455.0639
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
M. Angelopoulos
中科院分区：
文献类型：
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作者：
D. Medeiros;A. Aviram;C. Guarnieri;Wu;R. Kwong;C. Magg;A. Mahorowala;W. Moreau;K. Petrillo;M. Angelopoulos
在过去的三十年里，用高压电子束书写工具制作高级掩模的电阻发生了巨大的变化。从PMMA和其他早期的微米尺寸的链裂抗蚀剂，到今天正在开发的水性可显影、干蚀刻化学放大系统，这些抗蚀剂系统的化学和加工条件的仔细调整，使得光掩膜的图案越来越复杂，包含越来越精细的特征。最近，我们的研究工作主要集中在低活化能的化学放大抗蚀剂，该抗蚀剂基于金属保护的聚羟基苯乙烯。这些ketal抗蚀剂系统，或KRSs，已经经历了一系列的优化和评估周期，以微调其性能，用于使用75千伏IBM EL4+矢量扫描电子束曝光系统的先进掩模制造应用。实验结果表明，优化后的配方KRS-XE具有优越的光刻性能和高水平的处理鲁棒性。此外，我们还描述了含有有机金属物质的KRS-XE的先进配方，该配方在Cr蚀刻过程中表现出优于novolak基抗蚀剂的干蚀刻性能，同时保持了优异的光刻性能。最后，概述了目前在光掩膜制造过程中实施化学放大抗蚀剂所面临的挑战，以及目前正在寻求的扩展KRS技术能力的方法。
Resists for advanced mask-making with high-voltage electron-beam writing tools have undergone dramatic changes over the last three decades. From PMMA and the other early chain-scission resists for micron dimensions to the aqueous-base-developable, dry-etchable chemically amplified systems being developed today, careful tuning of the chemistry and processing conditions of these resist systems has allowed the patterning of photomasks of increasing complexity containing increasingly finer features. Most recently, our research efforts have been focused on a low-activation-energy chemically amplified resist based on ketal-protected poly(hydroxystyrene). These ketal resist systems, or KRSs, have undergone a series of optimization and evaluation cycles in order to fine-tune their performance for advanced mask-fabrication applications using the 75-kV IBM EL4+ vector scan e-beam exposure system. The experiments have led to an optimized formulation, KRS-XE, that exhibits superior lithographic performance and has a high level of processing robustness. In addition, we describe advanced formulations of KRS-XE incorporating organometallic species, which have shown superior dry-etch resistance to novolak-based resists in the Cr etch process while maintaining excellent lithographic performance. Finally, current challenges facing the implementation of a chemically amplified resist in the photomask manufacturing process are outlined, along with current approaches being pursued to extend the capabilities of KRS technology.