Proton Radiation Damage on SiGe:C HBTs and Additivity of Ionization and Displacement Effects
Proton Radiation Damage on SiGe:C HBTs and Additivity of Ionization and Displacement Effects
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DOI：
10.1109/tns.2009.2018552
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发表时间：
2009-08
影响因子：
1.8
通讯作者：
S. Díez;M. Lozano;G. Pellegrini;F. Campabadal;I. Mandić;D. Knoll;B. Heinemann;M. Ullán
中科院分区：
文献类型：
--
作者：
S. Díez;M. Lozano;G. Pellegrini;F. Campabadal;I. Mandić;D. Knoll;B. Heinemann;M. Ullán
这里显示了IHP Microelectronics的三种不同SiGe：C HBT技术的质子辐照结果。虽然晶体管仍然可以用于超级LHC上的应用，但观察到了严重的损坏。考虑电离和位移效应的加和性，以验证参数化实验。这项研究表明，质子辐照和以前的伽马和中子辐照之间的合理协议。
Proton irradiation results are shown here for three different SiGe:C HBT technologies from IHP Microelectronics. High damages are observed although the transistors remain usable for their application on the Super-LHC. Considerations on the ionization and displacement effects additivity are also presented in order to validate parameterized experiments. This study shows a reasonable agreement between proton irradiations and previous gamma and neutron irradiations.