High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature
High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature
复制标题
DOI：
10.1063/1.3206917
复制
发表时间：
2009-08
影响因子：
4
通讯作者：
Lin Zhang;Jun Li;Xiangwu Zhang;Xueyin Jiang;Zheling Zhang
中科院分区：
文献类型：
--
作者：
Lin Zhang;Jun Li;Xiangwu Zhang;Xueyin Jiang;Zheling Zhang
本文报道了以溅射Ta2O5薄膜为介质制备低驱动电压、高迁移率ZnO薄膜晶体管的方法。该器件的场效应迁移率为60.4 cm2/V s，阈值电压为1.1 V，开/关比为1.22×107，亚阈值摆幅为0.23 V/decade。高迁移率的部分原因是由于未定义的有源层造成的边缘电场效应。因此，考虑到我们的器件几何形状，实际迁移率约为40.5 cm2/V s。我们将高性能归功于适当的介电厚度，光滑的绝缘体表面以及绝缘体/通道界面中相对较低的陷阱态密度。
The authors report on the fabrication of low-driven-voltage and high mobility ZnO thin-film transistor with sputtering Ta2O5 film as the dielectric. The device shows a field effect mobility of 60.4 cm2/V s, a threshold voltage of 1.1 V, an on/off ratio of 1.22×107, and a subthreshold swing of 0.23 V/decade. The high mobility partially resulted from the fringing-electric-field effect due to the undefined active layer. Therefore, considering our device geometry, the actual mobility is about 40.5 cm2/V s. We contribute the high performance to the proper dielectric thickness, smooth insulator surface, and relatively low trap state densities in the insulator/channel interface.