Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes.
Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes.
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DOI:
10.1364/oe.21.016716
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发表时间:
2013-07
期刊:
影响因子:
3.8
通讯作者:
Zhiwen Lu;Wenlu Sun;Qiugui Zhou;J. Campbell;Xudong Jiang;M. Itzler
中科院分区:
文献类型:
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作者:
Zhiwen Lu;Wenlu Sun;Qiugui Zhou;J. Campbell;Xudong Jiang;M. Itzler
We report balanced InGaAs/InP single photon avalanche diodes (SPADs) operated in sinusoidal gating mode with a tunable phase shifter to reduce common mode noise. This technique enables detection of small avalanche pulses, which results in reduced afterpulsing. For laser repletion rate of 20 MHz at 240 K, the dark count rate for photon detection efficiency of 10% is 8.9 kHz.