Dose rate radiation induced linear CCD functional failure
Dose rate radiation induced linear CCD functional failure
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DOI：
10.1109/radecs.2011.6131316
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发表时间：
2011-09
期刊：
影响因子：
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通讯作者：
Zujun Wang;Bengqi Tang;Z. Xiao;Minbo Liu;Yong Zhang;Shaoyan Huang
中科院分区：
文献类型：
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作者：
Zujun Wang;Bengqi Tang;Z. Xiao;Minbo Liu;Yong Zhang;Shaoyan Huang
介绍了不同剂量率辐照引起电荷耦合器件（CCD）功能失效的实验研究。在60Co γ射线辐照试验中，将CCD分为三组，分别为无屏蔽、输出放大器屏蔽、光敏区和移位寄存器区用铅屏蔽。线阵CCD的辐射耐受性取决于其是否被屏蔽的剂量率。比较了不同剂量率辐照下CCD功能失效的总剂量。确定了电离辐射引起功能失效的判据。分析了CCD功能失效的机理。
The experiments of different dose rate radiation induced Charge Coupled Devices (CCD) functional failure are presented. The CCDs are divided into three groups with no shielding, shielding the output amplifiers, and shielding the photo sensing and the shift register areas with Pb during 60Co γ tests. The radiation tolerance depend on the dose rates whether the linear CCDs are shielded or not. The total doses to functional failure of the CCDs at different dose rate radiation are compared. The criterion of functional failure induced by ionization radiation is ascertained. The mechanism of CCD functional failure is analyzed.