Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity
Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity
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DOI：
10.1063/1.4991053
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发表时间：
2017-08
影响因子：
3.2
通讯作者：
Thi Van;A. Nguyen;Y. Shiratsuchi;Atsushi Kobane;Saori Yoshida;R. Nakatani
中科院分区：
文献类型：
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作者：
Thi Van;A. Nguyen;Y. Shiratsuchi;Atsushi Kobane;Saori Yoshida;R. Nakatani
采用可逆等温电调谐方法研究了Pt/Co/Au/Cr2 O3/Pt叠层薄膜垂直交换偏压磁电开关的阈值电场Eth随磁场的变化关系.由于界面交换耦合的单向性质，正到负和负到正切换的Eth值不同。的Eth值是成反比的磁场强度，这种关系的定量分析表明，开关驱动的反铁磁畴的成核和生长。我们还发现Eth的磁场依赖性表现出一个偏移电场，这可能与主要位于界面处的未补偿反铁磁磁矩有关.我们采用可逆等温电调谐方法报道了Pt/Co/Au/Cr2 O3/Pt堆叠膜中垂直交换偏压磁电开关的阈值电场Eth的磁场依赖性.由于界面交换耦合的单向性质，正到负和负到正切换的Eth值不同。的Eth值是成反比的磁场强度，这种关系的定量分析表明，开关驱动的反铁磁畴的成核和生长。我们还发现，Eth的磁场依赖性表现出偏移电场，这可能与主要位于界面处的未补偿反铁磁矩有关。
We report the magnetic field dependence of the threshold electric field Eth for the magnetoelectric switching of the perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt stacked films using a reversible isothermal electric tuning approach. The Eth values for the positive-to-negative and negative-to-positive switching are different because of the unidirectional nature of the interfacial exchange coupling. The Eth values are inversely proportional to the magnetic-field strength, and the quantitative analysis of this relationship suggests that the switching is driven by the nucleation and growth of the antiferromagnetic domain. We also find that the magnetic-field dependence of Eth exhibits an offset electric field that might be related to the uncompensated antiferromagnetic moments located mainly at the interface.We report the magnetic field dependence of the threshold electric field Eth for the magnetoelectric switching of the perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt stacked films using a reversible isothermal electric tuning approach. The Eth values for the positive-to-negative and negative-to-positive switching are different because of the unidirectional nature of the interfacial exchange coupling. The Eth values are inversely proportional to the magnetic-field strength, and the quantitative analysis of this relationship suggests that the switching is driven by the nucleation and growth of the antiferromagnetic domain. We also find that the magnetic-field dependence of Eth exhibits an offset electric field that might be related to the uncompensated antiferromagnetic moments located mainly at the interface.