XPS and X-BIS Studies of Gd Monopnictides
XPS and X-BIS Studies of Gd Monopnictides
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DOI：
10.1143/jpsj.65.1000
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发表时间：
1996-04
影响因子：
1.7
通讯作者：
H. Yamada;T. Fukawa;T. Muro;Yoshiki Tanaka;S. Imada;S. Suga;D. Li;Takashi Suzuki
中科院分区：
文献类型：
--
作者：
H. Yamada;T. Fukawa;T. Muro;Yoshiki Tanaka;S. Imada;S. Suga;D. Li;Takashi Suzuki
用X射线光电子能谱、X射线韧致辐射等色谱和真空紫外反光电子能谱研究了GDX(X：P，As，Sb，Bi)的电子结构。我们发现了Gd3d、4d和4f能级从GDP到GdBi3个能级的单调能量转移。这种系统的能量漂移归因于Gd5d态通过Gdx的晶场分裂减少。被占据的价带主要由Xp态主导。价带的能量移动与Gd衍生态的能量移动有很大的不同，但通过能带计算得到了一致的解释。
We have studied the electronic structures of GdX (X: P, As, Sb, Bi) by means of the X-ray photoemission, X-ray bremsstrahlung isochromat and vacuum ultraviolet inverse photoemission spectroscopy. We have found monotonous energy shifts of the Gd 3 d , 4 d and 4 f levels from GdP to GdBi. Such systematic energy shifts are attributed to the reduced crystal field splitting of the Gd 5 d state through GdX. The occupied valence band is dominated by the X p state. The energy shifts of the valence band are found to be much different from those of the Gd-derived states, but consistently interpreted by the band calculation.