Coplanar waveguides and microwave inductors on silicon substrates
Coplanar waveguides and microwave inductors on silicon substrates
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硅衬底上的共面波导和微波电感器
DOI：
10.1109/22.414534
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发表时间：
1995
影响因子：
4.3
通讯作者：
H. Patterson
中科院分区：
文献类型：
--
作者：
A. Reyes;S. El;S. Dorn;M. Dydyk;D. Schroder;H. Patterson
硅作为微波衬底材料具有成本低、技术成熟等诸多优势。本文的目的是评估的潜力，使用高电阻率硅作为一个低成本低损耗的微波衬底，通过实验比较研究。测试了在Si、GaAs和石英衬底上制作的共面波导，并比较了它们的特性。在不同衬底上制作了微波螺旋电感和曲折线，并对其性能进行了分析。结果表明，在高电阻率（3 k至7 k /spl Ω/-cm）硅衬底上实现的共面传输线（CPW）的损耗与在覆盖有绝缘体的GaAs衬底上实现的共面传输线的损耗相当。此外，测得的空载Q的微波感应结构的高电阻率硅衬底上的GaAs和石英上的相同结构的测得的空载Q的。本文论证了高阻硅可以用作微波衬底。>
Silicon has many advantages as a microwave substrate material including low cost and a mature technology. The aim of this paper is to evaluate the potential of using high-resistivity silicon as a low-cost low-loss microwave substrate through an experimental comparative study. Coplanar waveguides fabricated on Si, GaAs, and quartz substrates are tested and their characteristics are compared. Microwave spiral inductors and meander lines are also fabricated on various substrates, and their performance is also analyzed. The results demonstrate that the losses of a coplanar transmission line (CPW) realized on high-resistivity (3 k to 7 k /spl Omega/-cm) silicon substrates are comparable to the losses of a CPW realized on a GaAs substrate covered with insulators. Furthermore, measured unloaded Q's of microwave inductive structures on high-resistivity silicon substrates are comparable to the measured unloaded Q's of the same structures on GaAs and on quartz. This paper demonstrates that high-resistivity Si can be used as a microwave substrate. >