Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
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DOI：
10.7567/apex.10.031002
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发表时间：
2017-03-01
影响因子：
2.3
通讯作者：
Hirayama, Hideki
中科院分区：
文献类型：
--
作者：
Takano, Takayoshi;Mino, Takuya;Hirayama, Hideki
提高光提取效率是实现高效AlGaN基紫外发光二极管（UV-LED）的关键。我们介绍了几个功能，以提高光提取：一个透明的AlGaN：Mg接触层，Rh镜电极，AlN模板上的图案化蓝宝石衬底，和封装树脂。AlGaN的组合：Mg接触层和Rh镜电极显著提高了UV-LED的输出功率和外量子效率（EQE）。通过引入上述特征，在275 nm的发射波长和20 mA的直流电流下实现了>20%的最大EQE。(C)2017日本应用物理学会
Enhancing the light-extraction efficiency is the key issue for realizing highly efficient AlGaN-based ultraviolet light-emitting diodes (UV-LEDs). We introduced several features to improve the light extraction: a transparent AlGaN:Mg contact layer, a Rh mirror electrode, an AlN template on a patterned sapphire substrate, and encapsulation resin. The combination of the AlGaN: Mg contact layer and the Rh mirror electrode significantly improved the output power and the external quantum efficiency (EQE) of UV-LEDs. By introducing the aforementioned features, a maximum EQE of >20% at an emission wavelength of 275 nm and a 20-mA direct current was achieved. (C) 2017 The Japan Society of Applied Physics