Hall Effect in Oriented Single Crystals of n-Type Germanium
Hall Effect in Oriented Single Crystals of n-Type Germanium
复制标题
n 型锗定向单晶的霍尔效应
DOI：
10.1103/physrev.101.580
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发表时间：
1956
期刊：
影响因子：
--
通讯作者：
W. E. Krag
中科院分区：
文献类型：
--
作者：
W. Bullis;W. E. Krag
对n型锗的定向单晶进行了霍尔测量，证实了霍尔系数随磁场方向和大小以及电流方向的变化，这是基于八椭球体模型的理论预测的。虽然必须做出其他假设来确保精确的一致性，但这些测量，当在适当的条件下进行时，可以用假设能量无关的散射时间τ的理论来解释。这种类型的测量可能对确定其他半导体中靠近带边缘的能量表面的对称性是有用的。
Hall measurements have been made on oriented single crystals of n-type germanium confirming the variations of the Hall coefficient with the direction and magnitude of the magnetic field, and with the direction of the current, which are predicted by theories based on the eight-ellipsoid model. Although other assumptions must be made to secure exact agreement, these measurements, when made under suitable conditions, can be explained by a theory assuming an energy-independent scattering time τ. This type of measurement may be useful in determining symmetry properties of the energy surfaces near a band edge in other semiconductors.