Accelerated optimization of multilayer trench etches using model-based experimental design
Accelerated optimization of multilayer trench etches using model-based experimental design
复制标题
使用基于模型的实验设计加速优化多层沟槽蚀刻
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
Meghali Chopra
中科院分区：
文献类型：
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作者：
Kara Kearney;Sonali N. Chopra;Xilan Zhu;Yang H. Ban;R. Bonnecaze;Meghali Chopra
随着刻蚀轮廓的临界尺寸(CDs)不断减小，对等离子体刻蚀工艺的精确控制变得越来越重要。实现这种控制需要优化蚀刻配方，这既耗时又昂贵，因为必须进行大量的实验。在这里，我们提出了一种基于模型的实验设计方法来预测工艺窗口以实现高深宽比沟槽的目标CDS。使用蚀刻的物理和化学的降阶模型来确定要执行以校准该模型的最佳实验。然后，该模型被用来有效地探索工艺参数空间，以确定实现所需CDS范围的工艺参数的最大范围。该方法是通过三层材料的三步沟槽刻蚀实际演示的，三层材料包括玻璃上旋转、碳上旋转和硅。研究发现，这种基于物理模型的方法确定最佳刻蚀配方所需的实验次数不到全因素法的一半。
As the critical dimensions (CDs) of etch profiles continue to decrease, precise control of plasma etch processing becomes increasingly important. Achieving this control requires optimizing etch recipes, which is time consuming and expensive as an extensive amount of experiments must be performed. Here we present a method for the prediction of process windows to achieve target CDs for high aspect ratio trenches using model-based experimental design. A reduced-order model of the physics and chemistry of the etch is used to identify the best experiments to perform to calibrate the model. The model is then used to efficiently explore the process parameter space to identify the largest ranges of process parameters that achieve desired ranges of CDs. The methodology is practically demonstrated on a three-step trench etch through three layers of material consisting of spin-on-glass, spin-on-carbon and silicon. It is found that this physics-model based method requires less than half as many experiments to identify the optimal etch recipe than full-factorial design of experiments.